Datasheet4U Logo Datasheet4U.com

EMBA2A06HS

Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor

EMBA2A06HS General Description

N-CH BVDSS 60V RDSON (MAX.)@VGS=10V 120mΩ RDSON (MAX.)@VGS=4.5V 180mΩ ID @TC=25℃ 11A Dual N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage .

EMBA2A06HS Datasheet (370.08 KB)

Preview of EMBA2A06HS PDF

Datasheet Details

Part number:

EMBA2A06HS

Manufacturer:

Excelliance MOS

File Size:

370.08 KB

Description:

Dual n-channel logic level enhancement mode field effect transistor.

📁 Related Datasheet

EMBA2A10VS Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMBA2N10A N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMBA2N10AS N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMBA0A10G MOSFET (Excelliance MOS)

EMBA0N10A N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMBA0N10CS N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMBA0N10F MOSFET (Excelliance MOS)

EMBA0N10G MOSFET (Excelliance MOS)

EMBA0N10S MOSFET (Excelliance MOS)

EMBA1N10A MOSFET (Excelliance MOS)

TAGS

EMBA2A06HS Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

Image Gallery

EMBA2A06HS Datasheet Preview Page 2 EMBA2A06HS Datasheet Preview Page 3

EMBA2A06HS Distributor