EMBA0N10A Datasheet - Excelliance MOS

EMBA0N10A N-Channel Logic Level Enhancement Mode Field Effect Transistor

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 100mΩ ID 16A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=12A, RG=25Ω L = 0.05mH Power Dissipat.

EMBA0N10A Datasheet (225.26 KB)

EMBA0N10A Datasheet Preview — Preview of EMBA0N10A PDF

Datasheet Details

Part number:

EMBA0N10A

Manufacturer:

Excelliance MOS

File Size:

225.26 KB

Description:

N-channel logic level enhancement mode field effect transistor.

📁 Related Datasheet

EMBA0N10CS N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMBA0N10F MOSFET (Excelliance MOS)

EMBA0N10G MOSFET (Excelliance MOS)

EMBA0N10S MOSFET (Excelliance MOS)

EMBA0A10G MOSFET (Excelliance MOS)

EMBA1N10A MOSFET (Excelliance MOS)

EMBA1N10Q N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMBA2A06HS Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMBA2A10VS Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMBA2N10A N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

TAGS

EMBA0N10A N-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

EMBA0N10A Distributor