EMBA0N10A Datasheet, Transistor, Excelliance MOS

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Part number:

EMBA0N10A

Manufacturer:

Excelliance MOS

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225.26kb

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📄 Datasheet

Description:

N-channel logic level enhancement mode field effect transistor.

TAGS

EMBA0N10A

Excelliance MOS

📁 Related Datasheet

EMBA0N10CS - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  100V  D RDSON (MAX.)  100mΩ  ID  12A  G   UIS, Rg.

EMBA0N10F - MOSFET (Excelliance MOS)
    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  100V  D RDSON (MAX.)  100mΩ  ID  12A  G   UIS, Rg.

EMBA0N10G - MOSFET (Excelliance MOS)
.

EMBA0N10S - MOSFET (Excelliance MOS)
    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  100V  D RDSON (MAX.)  100mΩ  ID  6A  G   UIS, Rg.

EMBA0A10G - MOSFET (Excelliance MOS)
    Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:    BVDSS  100V  RDSON (MAX.)  100mΩ  ID  3.5A      .

EMBA1N10A - MOSFET (Excelliance MOS)
    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  100V  D RDSON (MAX.)  110mΩ  ID  15A  G   UIS, Rg.

EMBA1N10Q - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 110mΩ ID 4.5A G UIS, Rg 100% Teste.

EMBA2A06HS - Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
EMBA2A06HS Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: N-CH BVDSS 60V RDSON (MAX.).

EMBA2A10VS - Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: N-CH BVDSS 100V RDSON (MAX.)@VGS=10V RD.

EMBA2N10A - N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)
N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N-CH BVDSS 100V RDSON (MAX.)@VGS=10V 100mΩ RDSON (MAX.)@VGS=4.5.