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EMBA0N10A Datasheet - Excelliance MOS

EMBA0N10A N-Channel Logic Level Enhancement Mode Field Effect Transistor

N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V D RDSON (MAX.) 100mΩ ID 16A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 L = 0.1mH, ID=12A, RG=25Ω L = 0.05mH Power Dissipat.

EMBA0N10A-ExcellianceMOS.pdf

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Datasheet Details

Part number:

EMBA0N10A

Manufacturer:

Excelliance MOS

File Size:

225.26 KB

Description:

N-channel logic level enhancement mode field effect transistor.

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EMBA0N10A EMBA0N10A N-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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