EMBA0N10S
Excelliance MOS
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EMBA0N10A - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
100mΩ
ID
16A
G
UIS, Rg 100% Tested.
EMBA0N10CS - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
100mΩ
ID 12A G
UIS, Rg.
EMBA0N10F - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
100mΩ
ID 12A G
UIS, Rg.
EMBA0N10G - MOSFET
(Excelliance MOS)
.
EMBA0A10G - MOSFET
(Excelliance MOS)
Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
RDSON (MAX.)
100mΩ
ID 3.5A
.
EMBA1N10A - MOSFET
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
110mΩ
ID 15A G
UIS, Rg.
EMBA1N10Q - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
100V
D
RDSON (MAX.)
110mΩ
ID
4.5A
G
UIS, Rg 100% Teste.
EMBA2A06HS - Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
EMBA2A06HS
Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor
▪Product Summary:
▪ Pin Description:
N-CH
BVDSS
60V
RDSON (MAX.).
EMBA2A10VS - Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor
▪Product Summary:
▪ Pin Description:
N-CH
BVDSS
100V
RDSON (MAX.)@VGS=10V RD.
EMBA2N10A - N-Channel Logic Level Enhancement Mode Field Effect Transistor
(Excelliance MOS)
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N-CH
BVDSS
100V
RDSON (MAX.)@VGS=10V
100mΩ
RDSON (MAX.)@VGS=4.5.