EMBA0A10G Datasheet - Excelliance MOS

EMBA0A10G MOSFET

Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 100V RDSON (MAX.) 100mΩ ID 3.5A Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate‐Source Voltage VGS Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 100 °C Power Dissipation TA = 25 °C TA = 100 °C Operating Junction & Storage Temperature Range ID IDM PD Tj, Tstg EMBA0A10G LIMITS ±20 3.5 .

EMBA0A10G Datasheet (190.25 KB)

EMBA0A10G Datasheet Preview — Preview of EMBA0A10G PDF

Datasheet Details

Part number:

EMBA0A10G

Manufacturer:

Excelliance MOS

File Size:

190.25 KB

Description:

Mosfet.

📁 Related Datasheet

EMBA0N10A N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMBA0N10CS N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMBA0N10F MOSFET (Excelliance MOS)

EMBA0N10G MOSFET (Excelliance MOS)

EMBA0N10S MOSFET (Excelliance MOS)

EMBA1N10A MOSFET (Excelliance MOS)

EMBA1N10Q N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

EMBA2A06HS Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor (Excelliance MOS)

TAGS

EMBA0A10G MOSFET Excelliance MOS

EMBA0A10G Distributor