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EMBA2A10VS

Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor

EMBA2A10VS General Description

N-CH BVDSS 100V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 100mΩ 150mΩ ID @TC=25℃ 9.0A ID @TA=25℃ 3.0A Dual N Channel MOSFET UIS、Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Sour.

EMBA2A10VS Datasheet (443.01 KB)

Preview of EMBA2A10VS PDF

Datasheet Details

Part number:

EMBA2A10VS

Manufacturer:

Excelliance MOS

File Size:

443.01 KB

Description:

Dual n-channel logic level enhancement mode field effect transistor.

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EMBA2A10VS Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor Excelliance MOS

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