* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
* Interdigitated structure provides high emitter efficiency
* Gold metallization realizes very good stability of the characteristics and excellent lifetime
* Multi
LFE15600X Datasheet (72.49 KB)
LFE15600X
72.49 KB
Npn microwave power transistor.
DISCRETE SEMICONDUCTORS DATA SHEET LFE15600X NPN microwave power transistor Product specification Supersedes data of January 1994 1997 Feb 19 Philip.
📁 Related Datasheet
LFE18500X NPN silicon planar epitaxial microwave power transistor (NXP)
LFE21560MHA1A004 Filters (MuRata)
LFE5U12 FPGA devices (Lattice Semiconductor)
LFE5U25 FPGA devices (Lattice Semiconductor)
LFE5U45 FPGA devices (Lattice Semiconductor)
LFE5U85 FPGA devices (Lattice Semiconductor)
LFE5UM-25 FPGA devices (Lattice Semiconductor)
LFE5UM-45 FPGA devices (Lattice Semiconductor)
LFE5UM-85 FPGA devices (Lattice Semiconductor)
LFE5UM5G-25 FPGA devices (Lattice Semiconductor)
