LFE18500X transistor equivalent, npn silicon planar epitaxial microwave power transistor.
* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
* Interdigitated structure provides high emitter efficien.
between 1.8 GHz and 1.9 GHz. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a FO-231 glued cap m.
NPN silicon planar epitaxial microwave power transistor in a FO-231 glued cap metal ceramic flange package, with emitter connected to flange.
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handbook, 4 columns
LFE18500X
QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a c.
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