* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
* Interdigitated structure provides high emitter efficiency
* Gold metallization realizes very good stability of the characteristics and excellent lifetime
* Multi
LFE18500X Datasheet (62.00 KB)
LFE18500X
62.00 KB
Npn silicon planar epitaxial microwave power transistor.
DISCRETE SEMICONDUCTORS DATA SHEET LFE18500X NPN silicon planar epitaxial microwave power transistor Product specification File under Discrete Semico.
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