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LV2327E40R - NPN microwave power transistor

Description

Common emitter class A linear wideband power amplifiers in the 2.3 to 2.7 GHz band.

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT445B metal ceramic flange package, with emitter connected to the flange.

Marking code: 2327E40R.

Features

  • Interdigitated structure provides high emitter efficiency.
  • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
  • Gold metallization realizes very stable characteristics and excellent lifetime.
  • Multicell geometry gives good balance of dissipated power and low thermal resistance.
  • Input and output matching cell improves the impedances and facilitates the design of wideband circuits.

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Datasheet Details

Part number LV2327E40R
Manufacturer NXP
File Size 47.57 KB
Description NPN microwave power transistor
Datasheet download datasheet LV2327E40R Datasheet
Additional preview pages of the LV2327E40R datasheet.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET LV2327E40R NPN microwave power transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Interdigitated structure provides high emitter efficiency • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Gold metallization realizes very stable characteristics and excellent lifetime • Multicell geometry gives good balance of dissipated power and low thermal resistance. • Input and output matching cell improves the impedances and facilitates the design of wideband circuits.
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