LV2327E40R Overview
1 mon emitter class A linear wideband power amplifiers in the 2.3 to 2.7 GHz band. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT445B metal ceramic flange package, with emitter connected to the flange. 3 2 Top view MAM315 c b 3 e Marking code:.
LV2327E40R Key Features
- Interdigitated structure provides high emitter efficiency
- Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
- Gold metallization realizes very stable characteristics and excellent lifetime
- Multicell geometry gives good balance of dissipated power and low thermal resistance
- Input and output matching cell improves the impedances and facilitates the design of wideband circuits
LV2327E40R Applications
- SOT445B PIN 1 2 3 collector base emitter connected to flange DESCRIPTION
- toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged. All persons who handle, use or di
- NOT REMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15