LV2327E40R Datasheet NPN microwave power transistor

Manufacturer: NXP Semiconductors

LV2327E40R npn microwave power transistor by NXP Semiconductors - Datasheet Preview

Datasheet Details

Part number	LV2327E40R
Manufacturer	NXP Semiconductors
File Size	47.57 KB
Description	NPN microwave power transistor
Download	LV2327E40R Download (PDF)

General Description

1 Common emitter class A linear wideband power amplifiers in the 2.3 to 2.7 GHz band.

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT445B metal ceramic flange package, with emitter connected to the flange.

3 2 Top view MAM315 c b 3 e Marking code: 2327E40R.

Overview

DISCRETE SEMICONDUCTORS DATA SHEET LV2327E40R NPN microwave power transistor Product speciﬁcation Supersedes data of November 1994 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product.

Key Features

Interdigitated structure provides high emitter efficiency.
Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR.
Gold metallization realizes very stable characteristics and excellent lifetime.
Multicell geometry gives good balance of dissipated power and low thermal resistance.
Input and output matching cell improves the impedances and facilitates the design of wideband circuits.

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