LV2327E40R datasheet, transistor equivalent, NXP

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LV2327E40R Features and benefits

* Interdigitated structure provides high emitter efficiency
* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VS.

LV2327E40R Application

handbook, halfpage LV2327E40R QUICK REFERENCE DATA Microwave performance for Tcase = 25 °C in a wideband common-emitte.

LV2327E40R Description

1 Common emitter class A linear wideband power amplifiers in the 2.3 to 2.7 GHz band. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT445B metal ceramic flange package, with emitter connected to the flange. 3 2 Top view .

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