Overview: NXP Semiconductors Technical Data Document Number: MMZ25332B Rev. 3, 11/2017 Heterojunction Bipolar Transistor Technology (InGaP HBT)
High Efficiency/Linearity Amplifier The MMZ25332B is a 2--stage, high linearity InGaP HBT broadband amplifier designed for femtocell, picocell, WLAN (802.11g/n), W--CDMA, TD--SCDMA and LTE wireless broadband applications. It provides exceptional linearity for LTE and W--CDMA air interfaces with an ACPR of –50 dBc at an output power of up to 22 dBm, covering frequencies from 1500 to 2800 MHz. It operates from a supply voltage of 3 to 5 V. The amplifier is fully input matched, requires minimal external matching on the output and is housed in a cost--effective, surface mount QFN 3 3 package. The device offers state--of--the--art reliability, ruggedness, temperature stability and ESD performance.
Typical Performance: VCC1 = VCC2 = VBIAS = 5 Vdc, ICQ = 400 mA Frequency Pout (dBm) Gps (dB) ACPR (dBc) PAE (%) Test Signal 2140 MHz 22 27.0 –50.0 7.0 W--CDMA 2620 MHz 21 26.0 –50.0 5.0 LTE 20 MHz MMZ25332BT1
1500–2800 MHz, 26.
