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NXP Semiconductors Electronic Components Datasheet

MMZ25332BT1 Datasheet

Heterojunction Bipolar Transistor

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NXP Semiconductors
Technical Data
Document Number: MMZ25332B
Rev. 3, 11/2017
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
High Efficiency/Linearity Amplifier
The MMZ25332B is a 2--stage, high linearity InGaP HBT broadband amplifier
designed for femtocell, picocell, WLAN (802.11g/n), W--CDMA, TD--SCDMA
and LTE wireless broadband applications. It provides exceptional linearity for
LTE and W--CDMA air interfaces with an ACPR of –50 dBc at an output power
of up to 22 dBm, covering frequencies from 1500 to 2800 MHz. It operates from
a supply voltage of 3 to 5 V. The amplifier is fully input matched, requires
minimal external matching on the output and is housed in a cost--effective,
surface mount QFN 3 3 package. The device offers state--of--the--art reliability,
ruggedness, temperature stability and ESD performance.
Typical Performance: VCC1 = VCC2 = VBIAS = 5 Vdc, ICQ = 400 mA
Frequency
Pout
(dBm)
Gps
(dB)
ACPR
(dBc)
PAE
(%)
Test Signal
2140 MHz
22
27.0
–50.0
7.0
W--CDMA
2620 MHz
21
26.0
–50.0
5.0
LTE
20 MHz
MMZ25332BT1
1500–2800 MHz, 26.5 dB, 33 dBm
InGaP HBT LINEAR AMPLIFIER
QFN 3 3--12L
Features
Frequency: 1500–2800 MHz
P1dB: 33 dBm @ 2500 MHz
Power gain: 26.5 dB @ 2500 MHz
OIP3: 48 dBm @ 2500 MHz
EVM 3% @ 23.5 dBm Pout, WLAN (802.11g)
Active bias control (adjustable externally)
Power down control via VBIAS pin
Class 3A HBM ESD rating
Single 3 to 5 V supply
Single--ended power detector
Cost--effective 12--pin, 3 mm QFN surface mount plastic package
Table 1. Typical CW Performance (1)
Characteristic
1800 2500 2800
Symbol MHz MHz MHz Unit
Small--Signal Gain
(S21)
Gp
27.6 26.5 25.0 dB
Input Return Loss
(S11)
IRL –26 –17 –16 dB
Output Return Loss
(S22)
ORL –9 –17 –16 dB
Power Output @1dB P1dB 32 33
Compression
32 dBm
1. VCC1 = VCC2 = VBIAS = 5 Vdc, TA = 25C, 50 ohm system,
CW Application Circuit
Table 2. Maximum Ratings
Rating
Supply Voltage
Supply Current
RF Input Power
Storage Temperature Range
Junction Temperature
Symbol Value
VCC
6
ICC
1200
Pin
30
Tstg –65 to +150
TJ
175
Unit
V
mA
dBm
C
C
Table 3. Thermal Characteristics
Characteristic
Symbol
Value (2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 92C, VCC1 = VCC2 = VBIAS = 5 Vdc
RJC
16
C/W
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
2012, 2014, 2017 NXP B.V.
RF Device Data
NXP Semiconductors
MMZ25332BT1
1


NXP Semiconductors Electronic Components Datasheet

MMZ25332BT1 Datasheet

Heterojunction Bipolar Transistor

No Preview Available !

Table 4. Electrical Characteristics(1) (VCC1 = VCC2 = VBIAS = 5 Vdc, 2500 MHz, TA = 25C, 50 ohm system, in NXP CW
Application Circuit)
Characteristic
Symbol
Min
Typ
Max
Small--Signal Gain (S21)
Input Return Loss (S11)
Gp
25
26.5
IRL
–17
Output Return Loss (S22)
ORL
–17
Power Output @ 1dB Compression
P1dB
33
Third Order Output Intercept Point, Two--Tone CW
OIP3
48
Noise Figure
NF
5.8
Supply Current
Supply Voltage
Table 5. ESD Protection Characteristics
ICQ
356
390
412
VCC
5
Test Methodology
Class
Human Body Model (per JESD22--A114)
3A
Machine Model (per EIA/JESD22--A115)
B
Charge Device Model (per JESD22--C101)
IV
Table 6. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Per JESD22--A113, IPC/JEDEC J--STD--020
1
260
Table 7. Ordering Information
Device
Tape and Reel Information
MMZ25332BT1
T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel
1. See Appendix A for test fixture documentation.
Package
QFN 3 3--12L
Unit
dB
dB
dB
dBm
dBm
dB
mA
V
Unit
C
VCC1 VCC1
PDET
RFin
RFin
BIAS
CIRCUIT
VCC2/RFout
VCC2/RFout
VCC2/RFout
VBA1
VBA2
VBIAS
Figure 1. Functional Block Diagram
VCC1 VCC1 PDET
12 11 10
N.C. 1
RFin 2
RFin 3
9 VCC2/RFout
8 VCC2/RFout
7 VCC2/RFout
456
VBA1 VBA2 VBIAS
Figure 2. Pin Connections
MMZ25332BT1
2
RF Device Data
NXP Semiconductors


Part Number MMZ25332BT1
Description Heterojunction Bipolar Transistor
Maker NXP
Total Page 3 Pages
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