MMZ25332BT1
MMZ25332BT1 is Heterojunction Bipolar Transistor manufactured by NXP Semiconductors.
NXP Semiconductors Technical Data
Document Number: MMZ25332B Rev. 3, 11/2017
Heterojunction Bipolar Transistor Technology (In Ga P HBT)
High Efficiency/Linearity Amplifier
The MMZ25332B is a 2--stage, high linearity In Ga P HBT broadband amplifier designed for femtocell, picocell, WLAN (802.11g/n), W--CDMA, TD--SCDMA and LTE wireless broadband applications. It provides exceptional linearity for LTE and W--CDMA air interfaces with an ACPR of
- 50 d Bc at an output power of up to 22 d Bm, covering frequencies from 1500 to 2800 MHz. It operates from a supply voltage of 3 to 5 V. The amplifier is fully input matched, requires minimal external matching on the output and is housed in a cost--effective, surface mount QFN 3 3 package. The device offers state--of--the--art reliability, ruggedness, temperature stability and ESD performance.
- Typical Performance: VCC1 = VCC2 = VBIAS = 5 Vdc, ICQ = 400 m A
Frequency
Pout (d Bm)
Gps (d B)
ACPR (d Bc)
(%)
Test Signal
2140 MHz
- 50.0
W--CDMA
2620 MHz
- 50.0
20 MHz
1500- 2800 MHz, 26.5 d B, 33 d Bm In Ga P HBT LINEAR AMPLIFIER
QFN 3 3--12L
Features
- Frequency: 1500- 2800 MHz
- P1d B: 33 d Bm @ 2500 MHz
- Power gain: 26.5 d B @ 2500 MHz
- OIP3: 48 d Bm @ 2500 MHz
- EVM ≤ 3% @ 23.5 d Bm Pout, WLAN (802.11g)
- Active bias control (adjustable externally)
- Power down control via VBIAS pin
- Class 3A HBM ESD...
