MRF1K50GN, MRF1K50N Datasheet - NXP

MRF1K50GN RF Power LDMOS Transistors

NXP Semiconductors Technical Data RF Power LDMOS Transistors High Ruggedness N Channel Enhancement Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub GHz aerospace and mobile radio applications. Their unmatched input and output design allows for wide frequency range use from 1.8 to 500 MHz. Typical Performance: VDD = 50 Vdc Frequency (MHz) Sig.

MRF1K50GN Features

* High drain

* source avalanche energy absorption capability

* Unmatched input and output allowing wide frequency range utilization

* Device can be used single

* ended or in a push

* pull configuration

* Characterized from 30 to 50 V for ease of use

MRF1K50N-NXP.pdf