Part number:
MRF1K50H
Manufacturer:
File Size:
1.07 MB
Description:
Rf power ldmos transistor.
NXP Semiconductors Technical Data RF Power LDMOS Transistor High Ruggedness N Channel Enhancement Mode Lateral MOSFET This high rugg.
* High drain
* source avalanche energy absorption capability
* Unmatched input and output allowing wide frequency range utilization
* Device can be used single
* ended or in a push
* pull configuration
* Characterized from 30 to 50 V for ease of use
MRF1K50H
1.07 MB
Rf power ldmos transistor.
NXP Semiconductors Technical Data RF Power LDMOS Transistor High Ruggedness N Channel Enhancement Mode Lateral MOSFET This high rugg.
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