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MRF1K50N Datasheet RF Power LDMOS Transistors

Manufacturer: NXP Semiconductors

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Overview

NXP Semiconductors Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub--GHz aerospace and mobile radio applications.

Their unmatched input and output design allows for wide frequency range use from 1.8 to 500 MHz.

Typical Performance: VDD = 50 Vdc Frequency (MHz) Signal Type Pout (W) Gps (dB) ηD (%) 87.5--108 (1,2) 230 (3,4) CW Pulse (100 μsec, 20% Duty Cycle) 1421 CW 1500 Peak 23.1 23.4 83.2 75.1 Load Mismatch/Ruggedness Frequency (MHz) Signal Type VSWR Pin Test (W) Voltage Result 230 (3) Pulse > 65:1 at all 15 Peak 50 No Device (100 μsec, 20% Phase Angles (3 dB Degradation Duty Cycle) Overdrive) 1.

Key Features

  • High drain--source avalanche energy absorption capability.
  • Unmatched input and output allowing wide frequency range utilization.
  • Device can be used single--ended or in a push--pull configuration.
  • Characterized from 30 to 50 V for ease of use.
  • Suitable for linear.

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