* High drain
* source avalanche energy absorption capability
* Unmatched input and output allowing wide frequency range utilization
* Device can be used single
* ended or in a push
* pull configuration
* Characterized from 30 to 50 V for ease of use
MRF1K50N Datasheet (821.60 KB)
MRF1K50N
821.60 KB
Rf power ldmos transistors.
NXP Semiconductors Technical Data RF Power LDMOS Transistors High Ruggedness N Channel Enhancement Mode Lateral MOSFETs These high r.
📁 Related Datasheet
MRF1K50GN RF Power LDMOS Transistors (NXP)
MRF1K50H RF Power LDMOS Transistor (NXP)
MRF10005 The RF Line Microwave Power Transistor (Tyco)
MRF10005 MICROWAVE POWER TRANSISTOR (Motorola)
MRF1000MB Microwave Pulse Power Transistors (Tyco)
MRF1001A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Microsemi)
MRF1002 MICROWAVE POWER TRANSISTOR (Motorola)
MRF10031 MICROWAVE POWER TRANSISTOR (Motorola)
MRF10031 Microwave Power Silicon NPN Transistor (MACOM)
MRF1004MA NPN SILICON RF POWER TRANSISTOR (ASI)
