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MRF6S21140HSR3 Datasheet RF Power FET

Manufacturer: NXP Semiconductors

Download the MRF6S21140HSR3 datasheet PDF. This datasheet also includes the MRF6S21140HR3 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (MRF6S21140HR3-NXP.pdf) that lists specifications for multiple related part numbers.

Overview

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for W--CDMA base station applications with frequencies from 2110 to 2170 MHz.

Suitable for TDMA, CDMA and multicarrier amplifier applications.

To be used in Class AB for PCN--PCS/cellular radio and WLL applications.

Key Features

  • Characterized with Series Equivalent Large--Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • Optimized for Doherty.

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