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RF Transistor

MW6S010NR1 NXP

MW6S010NR1 RF Power Field Effect Transistors

MW6S010NR1 Avg. rating / M : star-19

datasheet Download

MW6S010NR1 Datasheet

Features and benefits


• Characterized with Series Equivalent Large - Signal Impedance Parameters
• On - Chip RF Feedback for Broadband Stability
• Qualified Up to a Maximum of 32 V.

Application

with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.

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MW6S010NR1 MW6S010NR1 MW6S010NR1

TAGS
MW6S010NR1
Power
Field
Effect
Transistors
MW6S010GMR1
MW6S010GNR1
MW6S010MR1
NXP
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