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PBSS4032PZ Datasheet 4.4 A PNP low VCEsat (BISS) transistor

Manufacturer: NXP Semiconductors

General Description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS4032NZ.

1.2

Overview

www.DataSheet4U.com PBSS4032PZ 30 V, 4.4 A PNP low VCEsat (BISS) transistor Rev.

01 — 31 March 2010 Product data sheet 1.

Product profile 1.

Key Features

  • Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3.