PBSS4480X Datasheet | NXP Semiconductors

FEATURES - High h FE and low VCEsat at high current operation - High collector current capability: IC maximum 4 A - High efficiency leading to less heat generation. APPLICATIONS - Medium power peripheral drivers; e.g. fan, motor - Strobe flash units for DSC and mobile phones - Inverter applications; e.g. TFT displays - Power switch for LAN and ADSL systems - Medium power DC-to-DC conversion - Battery chargers. DESCRIPTION NPN low VCEsat transistor in a SOT89 (SC-62) plastic package. PNP plement: PBSS5480X. PINNING PIN 1 2 3 emitter collector base QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PARAMETER collector current (DC) peak collector current equivalent on-resistance MAX. 4 10 54 UNIT V A A mΩ collector-emitter voltage 80 DESCRIPTION MARKING TYPE NUMBER PBSS4480X Note 1. - = p: made in Hong Kong. - = t: made in Malaysia. - = W: made in China. MARKING CODE(1) - 1Y 3 2 1 1 sym042 Fig.1 Simplified outline (SOT89) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS4480X - DESCRIPTION plastic surface mounted package; collector pad for good heat transfer; 3 leads VERSION SOT89 2004 Oct 25 Philips Semiconductors Product specification 80 V, 4 A NPN low VCEsat (BISS) transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICRM ICM IB IBM Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) repetitive peak collector current peak collector current base current (DC) peak base current total power dissipation t ≤ 300 µs Tamb ≤ 25 °C notes 1 and 2 note 2 note 3 note 4 note 5 Tj Tamb Tstg Notes 1. Operated under pulsed conditions; pulse width tp ≤ 10 ms; duty cycle δ ≤ 0.2. junction temperature ambient temperature storage temperature - - - - - - - 65 - 65 CONDITIONS open emitter open base open collector note 4 tp ≤ 10 ms; δ ≤ 0.1 - -...