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PBSS5560PA - 5 A PNP low VCEsat (BISS) transistor

General Description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.

NPN complement: PBSS4560PA.

Key Features

  • Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Exposed heat sink for excellent thermal and electrical conductivity Leadless small SMD plastic package with medium power capability 1.3.

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Full PDF Text Transcription for PBSS5560PA (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PBSS5560PA. For precise diagrams, tables, and layout, please refer to the original PDF.

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www.DataSheet4U.com PBSS5560PA 60 V, 5 A PNP low VCEsat (BISS) transistor Rev. 01 — 21 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement: PBSS4560PA. 1.2 Features and benefits „ „ „ „ „ Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Exposed heat sink for excellent thermal and electrical conductivity Leadless small SMD plastic package with medium power capability 1.