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PESD3V3V4UG - Very low capacitance unidirectional quadruple ESD protection diode arrays

Download the PESD3V3V4UG datasheet PDF. This datasheet also covers the PESD5V0V4UG variant, as both devices belong to the same very low capacitance unidirectional quadruple esd protection diode arrays family and are provided as variant models within a single manufacturer datasheet.

General Description

Very low capacitance unidirectional quadruple ElectroStatic Discharge (ESD) protection diode arrays in small Surface-Mounted Device (SMD) plastic packages designed to protect up to four signal lines from the damage caused by ESD and other transients.

Table 1.

Key Features

  • I ESD protection of up to four lines I Very low diode capacitance I Max. peak pulse power: PPP = 16 W I Low clamping voltage: VCL = 11 V I Ultra low leakage current: IRM = 25 nA I ESD protection up to 12 kV I IEC 61000-4-2; level 4 (ESD) I IEC 61000-4-5 (surge); IPP = 1.5 A 1.3.

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Note: The manufacturer provides a single datasheet file (PESD5V0V4UG_NXPSemiconductors.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PESD3V3V4UG
Manufacturer NXP Semiconductors
File Size 150.04 KB
Description Very low capacitance unidirectional quadruple ESD protection diode arrays
Datasheet download datasheet PESD3V3V4UG Datasheet

Full PDF Text Transcription for PESD3V3V4UG (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PESD3V3V4UG. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com PESDxV4UF; PESDxV4UG; PESDxV4UW Very low capacitance unidirectional quadruple ESD protection diode arrays Rev. 03 — 28 January 2008 Product data sheet...

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D protection diode arrays Rev. 03 — 28 January 2008 Product data sheet 1. Product profile 1.1 General description Very low capacitance unidirectional quadruple ElectroStatic Discharge (ESD) protection diode arrays in small Surface-Mounted Device (SMD) plastic packages designed to protect up to four signal lines from the damage caused by ESD and other transients. Table 1.

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