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PESD5V0L6US Datasheet Low Capacitance 6-fold Esd Protection Diode Array

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET www.DataSheet4U.com PESD5V0L6US Low capacitance 6-fold ESD protection diode array in SO8 package Product specification 2004 Feb 18 Philips Semiconductors Product specification Low.

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General Description

VALUE 5 16 6 UNIT V pF 1 2 3 4 001aaa388 8 7 6 5 1 2 3 4 8 7 6 5 DESCRIPTION Low capacitance 6-fold ESD protection diode array in a small S08 plastic package designed to protect up to six transmission or data lines against damage caused by ElectroStatic Discharge (ESD) and other transients.

MARKING TYPE NUMBER PESD5V0L6US MARKING CODE 5V0L6US sym004 Fig.1 Simplified outline (SO8) and symbol.

ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PESD5V0L6US SO8 DESCRIPTION plastic small outline package;

Key Features

  • Unidirectional ESD protection of up to 6 lines.
  • Bidirectional ESD protection of up to 5 lines.
  • Low diode capacitance.
  • Max. peak pulse power: Ppp = 35 W at tp = 8/20 µs.
  • Low clamping voltage: V(CL)R = 15 V at Ipp = 2.5 A.
  • Ultra low leakage current: IRM = 8 nA at VRWM = 5 V.
  • ESD protection up to 20 kV.
  • IEC 61000-4-2; level 4 (ESD).
  • IEC-61000-4-5 (surge); Ipp = 2.5 A at tp = 8/20 µs.

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