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PESD5V0L6US Datasheet

Low Capacitance 6-fold Esd Protection Diode Array

Manufacturer: NXP Semiconductors

PESD5V0L6US Overview

ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PESD5V0L6US SO8 DESCRIPTION plastic small outline package; body width 3.9 mm VERSION SOT96-1 2004 Feb 18 2 Philips Semiconductors Product specification Low capacitance 6-fold ESD protection diode array in SO8 package LIMITING VALUES In accordance with the Rating System (IEC 60134). SYMBOL Per diode Ppp Ipp Tj Tamb Tstg Notes.

PESD5V0L6US Key Features

  • Unidirectional ESD protection of up to 6 lines
  • Bidirectional ESD protection of up to 5 lines
  • Low diode capacitance
  • Max. peak pulse power: Ppp = 35 W at tp = 8/20 µs
  • Low clamping voltage: V(CL)R = 15 V at Ipp = 2.5 A
  • Ultra low leakage current: IRM = 8 nA at VRWM = 5 V
  • ESD protection up to 20 kV
  • IEC 61000-4-2; level 4 (ESD)
  • IEC-61000-4-5 (surge); Ipp = 2.5 A at tp = 8/20 µs

More Datasheets from NXP Semiconductors

See all NXP Semiconductors datasheets

Part Number Description
PESD5V0L6US Low capacitance 6-fold ESD protection diode arrays
PESD5V0L6UAS Low capacitance 6-fold ESD protection diode arrays
PESD5V0L1BA Low capacitance bidirectional ESD protection diodes
PESD5V0L1UA Low Capacitance Unidirectional ESD Protection Diodes
PESD5V0L1UB Low Capacitance Unidirectional ESD Protection Diodes
PESD5V0L1UL Low Capacitance Unidirectional ESD Protection Diodes
PESD5V0L1USF Low capacitance unidirectional ESD protection diode
PESD5V0L2BT Low capacitance double bidirectional ESD protection diodes
PESD5V0L2UM Low capacitance double ESD protection diode
PESD5V0L2UMB Low capacitance unidirectional double ESD protection array

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