PHB125N06LT datasheet, fet equivalent, NXP

Features and benefits

very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters and general purpose switching appli.

Application

PHB125N06LT QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC)1 Tot.

Description

N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting Using ’trench’ technology the device features very low on-state resistance and has integral zener diodes giving ESD protection up.

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