PHB12NQ15T transistor equivalent, n-channel trenchmos transistor.
* ’Trench’ technology
* Low on-state resistance
* Fast switching
* Low thermal resistance
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VDSS = 150 V ID = 12.5 A
g
RDS(ON) ≤ 200 mΩ
s
GENERAL.
The PHP12NQ15T is supplied in the SOT78 (TO220AB) conventional leaded package. The PHB12NQ15T is supplied in the SOT404.
N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP12.
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