PHB38N02LT datasheet, fet equivalent, NXP

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Features and benefits

s Low on-state resistance s 2.5 V gate drive. 1.3 Applications s Linear regulator for DDR memory. 1.4 Quick reference data s VDS = 20 V s Ptot = 57.6 W s ID = 44.7 A s .

Application

s Linear regulator for DDR memory. 1.4 Quick reference data s VDS = 20 V s Ptot = 57.6 W s ID = 44.7 A s RDSon ≤ 16 mΩ .

Description

N-channel logic level ﬁeld-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHB38N02LT in SOT404 (D2-PAK) PHD38N02LT in SOT428 (D-PAK). 1.2 Features s Low on-state resistance s 2.5 V gate drive. 1.3 Applicat.

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