PHB3N40E PowerMOS transistors Avalanche energy rated

NXP

Description

Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated .
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.

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PHB3N40E Datasheet Preview — Preview of PHB3N40E PDF

Datasheet Specifications

Part number: PHB3N40E
Manufacturer: NXP ↗
File Size: 94.23 KB
Datasheet: PHB3N40E_PhilipsSemiconductors.pdf
Description: PowerMOS transistors Avalanche energy rated

Features

* Repetitive Avalanche Rated
* Fast switching
* Stable off-state characteristics
* High thermal cycling performance
* Low thermal resistance PHP3N40E, PHB3N40E, PHD3N40E SYMBOL d QUICK REFERENCE DATA VDSS = 400 V g ID = 2.5 A RDS(ON) ≤ 3.5 Ω s GENERAL DES

PHB3N40E Distributors

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PHB3N40E PowerMOS transistors Avalanche energy rated NXP

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