PHB3N40E PowerMOS transistors Avalanche energy rated

NXP

PHB3N40E Description

Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated .
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.

PHB3N40E Features

* Repetitive Avalanche Rated
* Fast switching
* Stable off-state characteristics
* High thermal cycling performance
* Low thermal resistance PHP3N40E, PHB3N40E, PHD3N40E SYMBOL d QUICK REFERENCE DATA VDSS = 400 V g ID = 2.5 A RDS(ON) ≤ 3.5 Ω s GENERAL DES

📥 Download Datasheet

PHB3N40E Datasheet Preview — Preview of PHB3N40E PDF

Datasheet Details

Part number: PHB3N40E
Manufacturer: NXP ↗
File Size: 94.23 KB
Datasheet: PHB3N40E_PhilipsSemiconductors.pdf
Description: PowerMOS transistors Avalanche energy rated

📁 Related Datasheet

PHB32N06LT - N-channel MOSFET (nexperia)
PHB-5R0H155-R - Supercapacitors (EATON)
PHB-5R0H255-R - Supercapacitors (EATON)
PHB-5R0H305-R - Supercapacitors (EATON)
PHB-5R0H505-R - Supercapacitors (EATON)
PHB-5R0V155-R - Supercapacitors (EATON)
PHB-5R0V255-R - Supercapacitors (EATON)
PHB-5R0V305-R - Supercapacitors (EATON)

📌 All Tags

PowerMOS transistors Avalanche energy rated NXP

NXP PHB3N40E-like datasheet

PHB3N50E - PowerMOS transistors Avalanche energy rated
PHB3N60E - PowerMOS transistors Avalanche energy rated
PHB30NQ15T - N-channel TrenchMOS transistor
PHB33NQ20T - N-channel TrenchMOS standard level FET
PHB34NQ10T - N-channel TrenchMOS transistor
PHB36N06E - PowerMOS transistor