PHB3N60E PowerMOS transistors Avalanche energy rated

NXP

PHB3N60E Description

Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated .
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.

PHB3N60E Features

* Repetitive Avalanche Rated
* Fast switching
* Stable off-state characteristics
* High thermal cycling performance

📥 Download Datasheet

PHB3N60E Datasheet Preview — Preview of PHB3N60E PDF

Datasheet Details

Part number: PHB3N60E
Manufacturer: NXP ↗
File Size: 79.83 KB
Datasheet: PHB3N60E_PhilipsSemiconductors.pdf
Description: PowerMOS transistors Avalanche energy rated

📁 Related Datasheet

PHB32N06LT - N-channel MOSFET (nexperia)
PHB-5R0H155-R - Supercapacitors (EATON)
PHB-5R0H255-R - Supercapacitors (EATON)
PHB-5R0H305-R - Supercapacitors (EATON)
PHB-5R0H505-R - Supercapacitors (EATON)
PHB-5R0V155-R - Supercapacitors (EATON)
PHB-5R0V255-R - Supercapacitors (EATON)
PHB-5R0V305-R - Supercapacitors (EATON)

📌 All Tags

PowerMOS transistors Avalanche energy rated NXP

NXP PHB3N60E-like datasheet

PHB3N40E - PowerMOS transistors Avalanche energy rated
PHB3N50E - PowerMOS transistors Avalanche energy rated
PHB30NQ15T - N-channel TrenchMOS transistor
PHB33NQ20T - N-channel TrenchMOS standard level FET
PHB34NQ10T - N-channel TrenchMOS transistor
PHB36N06E - PowerMOS transistor