PHB3N50E PowerMOS transistors Avalanche energy rated

NXP

Description

Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated .
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.

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PHB3N50E Datasheet Preview — Preview of PHB3N50E PDF

Datasheet Specifications

Part number: PHB3N50E
Manufacturer: NXP ↗
File Size: 78.35 KB
Datasheet: PHB3N50E_PhilipsSemiconductors.pdf
Description: PowerMOS transistors Avalanche energy rated

Features

* Repetitive Avalanche Rated
* Fast switching
* Stable off-state characteristics
* High thermal cycling performance

PHB3N50E Distributors

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PHB3N50E PowerMOS transistors Avalanche energy rated NXP

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