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PHD2N60 Datasheet - NXP

PowerMOS transistor

PHD2N60 General Description

N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mod.

PHD2N60 Datasheet (80.14 KB)

Preview of PHD2N60 PDF

Datasheet Details

Part number:

PHD2N60

Manufacturer:

NXP ↗

File Size:

80.14 KB

Description:

Powermos transistor.

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PHD2N60 PowerMOS transistor NXP

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