PHP130N03LT Datasheet - NXP

TrenchMOS transistor Logic level FET

PHP130N03LT Features

* ’Trench’ technology

* Very low on-state resistance

* Fast switching

* Stable off-state characteristics

* High thermal cycling performance

* Low thermal resistance PHP130N03LT, PHB130N03LT SYMBOL d QUICK REFERENCE DATA VDSS = 30 V ID = 75 A g s RD

PHP130N03LT General Description

N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP130N03LT is supplied in the SOT78 (TO220.

PHP130N03LT Datasheet (51.50 KB)