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NXP Semiconductors Electronic Components Datasheet

PUMD6 Datasheet

NPN/PNP resistor-equipped transistor

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DISCRETE SEMICONDUCTORS
DATA SHEET
PEMD6; PUMD6
NPN/PNP resistor-equipped
transistors;
R1 = 4.7 kΩ, R2 = open
Product data sheet
Supersedes data of 2003 Nov 04
2004 Apr 07


NXP Semiconductors Electronic Components Datasheet

PUMD6 Datasheet

NPN/PNP resistor-equipped transistor

No Preview Available !

NXP Semiconductors
NPN/PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
Product data sheet
PEMD6; PUMD6
FEATURES
Built-in bias resistors
Simplified circuit design
Reduction of component count
Reduced pick and place costs.
APPLICATIONS
Low current peripheral driver
Replacement of general purpose transistors in digital
applications
Control of IC inputs.
PRODUCT OVERVIEW
TYPE NUMBER
PEMD6
PUMD6
PACKAGE
PHILIPS
SOT666
SOT363
EIAJ
SC-88
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
DESCRIPTION
NPN/PNP resistor-equipped transistors (see
“_Data_Sheet_Remark Supersedes data of 2003 Nov 04”
for package details).
QUICK REFERENCE DATA
SYMBOL PARAMETER TYP. MAX. UNIT
VCEO
collector-emitter
voltage
50 V
IO
output current (DC)
100 mA
TR1 NPN
−−−
TR2 PNP
−−−
R1 bias resistor
4.7
kΩ
R2 open
−−−
MARKING CODE
NPN/NPN
COMPLEMENT
D6
D*6(1)
PEMH7
PUMH7
PNP/PNP
COMPLEMENT
PEMB3
PUMB3
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
TYPE NUMBER
PEMD6; PUMD6
SIMPLIFIED OUTLINE AND SYMBOL
handbook, halfpa6ge
5
1
Top view
2
654
4
R1
TR2
TR1
R1
3
123
MHC028
PINNING
PIN DESCRIPTION
1 emitter TR1
2 base TR1
3 collector TR2
4 emitter TR2
5 base TR2
6 collector TR1
2004 Apr 07
2


Part Number PUMD6
Description NPN/PNP resistor-equipped transistor
Maker NXP
Total Page 8 Pages
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