logo

RZ1214B35Y Datasheet, NXP

RZ1214B35Y transistor equivalent, npn microwave power transistor.

RZ1214B35Y Avg. rating / M : 1.0 rating-13

datasheet Download

RZ1214B35Y Datasheet

Features and benefits


* Interdigitated structure provides high emitter efficiency
* Diffused emitter ballasting resistor providing excellent current sharing and withstanding a high VSW.

Application


* Common base class-C wideband pulsed power amplifiers for L-band radar applications in the 1.2 to 1.4 GHz band. 2 3.

Image gallery

RZ1214B35Y Page 1 RZ1214B35Y Page 2 RZ1214B35Y Page 3

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts