* Interdigitated structure provides high emitter efficiency
* Diffused emitter ballasting resistor providing excellent current sharing and withstanding a high VSW.

* Intended for use in common base class C wideband pulsed power amplifiers for L-band radar applications in the 1.2 .

1 c b e 2 MAM314 DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the base connected to the flange. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA Microwave performance .

RZ1214B35Y

RZ1200

RZ1235

RZ1030

RZ1040

RZ1055

RZ1065

RZ1100

RZ1125

RZ1150

RZ1175

RZ1510

RZ1515