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BFU710F Datasheet

NPN wideband silicon germanium RF transistor

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BFU710F
NPN wideband silicon germanium RF transistor
Rev. 1 — 20 April 2011
Product data sheet
1. Product profile
CAUTION
1.1 General description
NPN silicon germanium microwave transistor for high speed, low noise applications in a
plastic, 4-pin dual-emitter SOT343F package.
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
1.2 Features and benefits
„ Low noise high gain microwave transistor
„ Noise figure (NF) = 1.45 dB at 12 GHz
„ High maximum power gain 14 dB at 12 GHz
„ 110 GHz fT silicon germanium technology
1.3 Applications
„ 2nd LNA stage and mixer stage in DBS LNB’s
„ Low noise amplifiers for microwave communications systems
„ Ka band oscillators DRO’s
„ Low current battery equipped applications
„ Microwave driver / buffer applications
„ GPS
„ RKE
„ AMR
„ ZigBee
„ FM radio
„ Mobile TV
„ Bluetooth
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NXP Semiconductors Electronic Components Datasheet

BFU710F Datasheet

NPN wideband silicon germanium RF transistor

No Preview Available !

www.DataSheet.co.kr
NXP Semiconductors
BFU710F
NPN wideband silicon germanium RF transistor
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VCBO
VCEO
VEBO
IC
Ptot
hFE
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
DC current gain
CCBS
fT
collector-base
capacitance
transition frequency
Gp(max) maximum power gain
NF noise figure
PL(1dB) output power at 1 dB
gain compression
Conditions
open emitter
open base
open collector
Tsp 90 °C
IC = 1 mA; VCE = 2 V;
Tj = 25 °C
VCB = 2 V; f = 1 MHz
IC = 9 mA; VCE = 2 V;
f = 2 GHz; Tamb = 25 °C
IC = 9 mA; VCE = 2 V;
f = 12 GHz; Tamb = 25 °C
IC = 2 mA; VCE = 2 V;
f = 12 GHz; ΓS = Γopt
IC = 5 mA; VCE = 2.5 V;
ZS = ZL = 50 Ω;
f = 5.8 GHz; Tamb = 25 °C
Min Typ
--
--
--
-2
[1] -
-
200 375
- 21
- 43
[2] -
14
- 1.45
- 4.5
Max
10
2.8
1.0
10
136
550
-
-
-
-
-
Unit
V
V
V
mA
mW
fF
GHz
dB
dB
dBm
[1] Tsp is the temperature at the solder point of the emitter lead.
[2] Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = Maximum Stable Gain (MSG).
2. Pinning information
Table 2.
Pin
1
2
3
4
Discrete pinning
Description
emitter
base
emitter
collector
Simplified outline Graphic symbol
34
4
21
2
1, 3
mbb159
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
BFU710F
-
plastic surface-mounted flat pack package; reverse
pinning; 4 leads
Version
SOT343F
BFU710F
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 April 2011
© NXP B.V. 2011. All rights reserved.
2 of 12
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Part Number BFU710F
Description NPN wideband silicon germanium RF transistor
Maker NXP Semiconductors
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