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BFU710F - NPN wideband silicon germanium RF transistor

Description

NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

This device is sensitive to ElectroStatic Discharge (ESD).

Observe precautions for handling electrostatic sensitive devices.

Features

  • Low noise high gain microwave transistor.
  • Noise figure (NF) = 1.45 dB at 12 GHz.
  • High maximum power gain 14 dB at 12 GHz.
  • 110 GHz fT silicon germanium technology 1.3.

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Datasheet Details

Part number BFU710F
Manufacturer NXP Semiconductors
File Size 126.39 KB
Description NPN wideband silicon germanium RF transistor
Datasheet download datasheet BFU710F Datasheet

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Full PDF Text Transcription

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BFU710F NPN wideband silicon germanium RF transistor Rev. 1 — 20 April 2011 Product data sheet 1. Product profile CAUTION 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 1.2 Features and benefits „ Low noise high gain microwave transistor „ Noise figure (NF) = 1.45 dB at 12 GHz „ High maximum power gain 14 dB at 12 GHz „ 110 GHz fT silicon germanium technology 1.
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