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BFU710F NPN wideband silicon germanium RF transistor

BFU710F Description

BFU710F NPN wideband silicon germanium RF transistor Rev.1 * 20 April 2011 Product data sheet 1.Product profile CAUTION 1.1 General de.
NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

BFU710F Features

* Low noise high gain microwave transistor
* Noise figure (NF) = 1.45 dB at 12 GHz
* High maximum power gain 14 dB at 12 GHz

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Datasheet Details

Part number
BFU710F
Manufacturer
NXP ↗ Semiconductors
File Size
126.39 KB
Datasheet
BFU710F_NXPSemiconductors.pdf
Description
NPN wideband silicon germanium RF transistor

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NPN wideband silicon germanium transistor NXP Semiconductors
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