Download BLF6G22LS-100 Datasheet PDF
BLF6G22LS-100 datasheet preview
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BLF6G22LS-100 Key Features

  • Easy power control
  • Integrated ESD protection
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (2000 MHz to 2200 MHz)
  • Internally matched for ease of use
  • pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

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BLF6G22LS-100 Description

100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Typical performance RF performance at Tcase = 25 °C in a mon source class-AB production test circuit. PAR = 7 dB at 0.01 % probability on CCDF per carrier;.