Description
45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
48[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz.CAUTION This device is
Features
- I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 405 mA: N Average output power = 2.5 W N Power gain = 18.5 dB (typ) N Efficiency = 13 % N ACPR =.
- 48 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (2000 MHz to 2200 MHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding Restrict.
BLF6G22S-45_NXPSemiconductors.pdf
