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BLL1214-35 Datasheet L-band radar LDMOS driver transistor

Manufacturer: NXP Semiconductors

General Description

2 1 BLL1214-35 PINNING - SOT467C PIN 1 2 3 drain gate source, connected to flange DESCRIPTION 3 Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap.

The common source is connected to the flange.

Top view MBK584 Fig.1 Simplified outline.

Overview

DISCRETE SEMICONDUCTORS www.datasheet4u.com DATA SHEET M3D381 BLL1214-35 L-band radar LDMOS driver transistor Product specification 2002 Sep 27 Philips Semiconductors Product specification L-band radar LDMOS driver.

Key Features

  • www. datasheet4u. com.
  • High power gain.
  • Easy power control.
  • Excellent ruggedness.
  • Source on mounting base eliminates DC isolators, reducing common mode inductance.