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NX3008PBKV - MOSFET

General Description

Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Key Features

  • Very fast switching.
  • Low threshold voltage.
  • Trench MOSFET technology.
  • ESD protection up to 2 kV.
  • AEC-Q101 qualified 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SO T6 NX3008PBKV 30 V, 220 mA dual P-channel Trench MOSFET Rev. 1 — 29 July 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 66 1.2 Features and benefits  Very fast switching  Low threshold voltage  Trench MOSFET technology  ESD protection up to 2 kV  AEC-Q101 qualified 1.3 Applications  Relay driver  High-speed line driver  High-side loadswitch  Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current VGS = -4.5 V; Tamb = 25 °C [1] Conditions Tj = 25 °C Min -8 - Typ 2.