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N02L083WC2A - Ultra-Low Power Asynchronous CMOS SRAM

Description

Pin Name A0-A17 WE CE1, CE2 OE I/O0-I/O7 VCC VSS Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enable Input Data Inputs/Outputs Power Ground N02L083WC2A STSOP-I, TSOP-I (DOC# 14-02-015 REV E ECN# 01-0998) The specifications of this device are subject to change without no

Features

  • Single Wide Power Supply Range 2.3 to 3.6 Volts.
  • Very low standby current 2.0µA at 3.0V (Typical).
  • Very low operating current 2.0mA at 3.0V and 1µs (Typical).
  • Very low Page Mode operating current 0.8mA at 3.0V and 1µs (Typical).
  • Simple memory control Dual Chip Enables (CE1 and CE2) Output Enable (OE) for memory expansion.
  • Low voltage data retention Vcc = 1.8V.
  • Very fast output enable access time 30ns OE access time.
  • Automat.

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Datasheet Details

Part number N02L083WC2A
Manufacturer NanoAmp Solutions
File Size 253.59 KB
Description Ultra-Low Power Asynchronous CMOS SRAM
Datasheet download datasheet N02L083WC2A Datasheet
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Full PDF Text Transcription

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NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N02L083WC2A www.DataSheet4U.com 2Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 8 bit Overview The N02L083WC2A is an integrated memory device containing a 2 Mbit Static Random Access Memory organized as 262,144 words by 8 bits. The device is designed and fabricated using NanoAmp’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. The N02L083WC2A is optimal for various applications where low-power is critical such as battery backup and hand-held devices.
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