MD56V82160
Description
The MD56V82160 is a 4-Bank 4,194,304-word 16-bit Synchronous dynamic RAM. The device operates at 3.3 V.
Key Features
- Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell
- 4-Bank 4,194,304-word 16-bit configuration
- Single 3.3 V power supply, 0.3 V tolerance
- Input : LVTTL compatible
- Output : LVTTL compatible
- Refresh : 8192 cycles/64 ms
- Programmable data transfer mode - CAS Latency (2, 3) - Burst Length (1, 2, 4, 8, Full Page) - Data scramble (sequential, interleave)
- Auto-refresh, Self-refresh capability
- Lead-Free Package: 54-pin 400 mil plastic TSOP (TypeII) (TSOP(2)54-P-400-0.80-K)(Product: MD56V82160-xxTAZ03) xx indicates speed rank.
