20N60 Overview
Key Specifications
Description
SuperFET MOSFET is onsemi’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.
Key Features
- 650 V @ TJ = 150°C
- Typ. RDS(on) = 150 mW
- Ultra Low Gate Charge (Typ. Qg = 75 nC )
- Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF )
- 100% Avalanche Tested
Representative 20N60 image (package may vary by manufacturer)
