20N60 ON Semiconductor

• 650 V @ TJ = 150°C
• Typ. RDS(on) = 150 mW
• Ultra Low Gate Charge (Typ. Qg = 75 nC )
• Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF )

such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Features
• 650 V @ TJ .