| Part Number | 20N60 |
|---|---|
| Manufacturer | ROUM |
| Overview |
These silicon N-channel Enhanced VDMOSFETs are obtained by the self-aligned planar Technology which reduce the conduction loss,improve switching performance and enhance the avalanche energy.The packag.
* Fast Switching * Low On Resistance(Rdson≤0.45Ω) * Low Gate Charge(Typical:61nC) * Low Reverse Transfer Capacitances(Typical:20pF) * 100% Single Pulse Avalanche Energy Test * 100% ΔVDS Test 3 Application * Used in various power switching circuit for system miniaturization and higher efficiency. * P. |
20N60 Datasheet
The 20N60 is a 20A 600V N-channel Enhancement Mode Power MOSFET.
| Part Number | 20N60 |
|---|---|
| Description | 600V N-CHANNEL POWER MOSFET |
| Manufacturer | Unisonic Technologies |
| Overview |
The UTC 20N60 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in allowing a mi.
* RDS(ON) < 0.45Ω @ VGS=10V, ID=10A * High switching speed
* SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source * ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 20N60L-T47-T 20N60G-T47-T 20N60L-T3P-T 20N60G-T3P-T Pin Assignment: G: Gate D: Drain S: Source Package TO-247 TO-. |
| Part Number | 20N60 |
|---|---|
| Description | IGBT |
| Manufacturer | IXYS |
| Overview | Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 20 N60 IXGH/IXGM 20 N60A VCES 600 V 600 V IC25 40 A 40 A VCE(sat) 2.5 V 3.0 V Symbol Test Conditions Maximum Ratings VCES V CGR VGES V GEM IC25 IC90. l International standard packages l 2nd generation HDMOSTM process l Low V CE(sat) - for low on-state conduction losses l High current handling capability l MOS Gate turn-on - drive simplicity l Voltage rating guaranteed at high temperature (125°C) Applications l AC motor speed control l DC servo a. |
| Part Number | 20N60 |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | onsemi |
| Overview |
SuperFET MOSFET is onsemi’s first generation of high voltage
super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge perfor.
* 650 V @ TJ = 150°C * Typ. RDS(on) = 150 mW * Ultra Low Gate Charge (Typ. Qg = 75 nC ) * Low Effective Output Capacitance (Typ. Coss(eff.) = 165 pF ) * 100% Avalanche Tested * These Devices are Pb *Free and are RoHS Compliant Applications * Solar Inverter * AC * DC Power Supply DATA SHEET www.onsem. |