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  ON Semiconductor Electronic Components Datasheet  

2N3019 Datasheet

Low Power Transistor

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2N3019
Low Power Transistor
NPN Silicon
Features
MILPRF19500/391 Qualified
Available as JAN, JANTX, and JANTXV
Hermetically Sealed Commercial Product with Option for Military
Temperature Range Screening
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Value
Collector Emitter Voltage
VCEO
80
Collector Base Voltage
VCBO
140
Emitter Base Voltage
VEBO
7.0
Collector Current Continuous
Total Device Dissipation @ TA = 25°C
IC 1.0
PT 800
Total Device Dissipation @ TC = 25°C
PT 5.0
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to
+200
Unit
Vdc
Vdc
Vdc
Adc
mW
W
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
195 °C/W
Thermal Resistance, Junction to Case
RqJC
30 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
TO5
CASE 205AA
STYLE 1
ORDERING INFORMATION
Device
Package
Shipping
JAN2N3019
JANTX2N3019
TO5
Bulk
JANTXV2N3019
© Semiconductor Components Industries, LLC, 2011
July, 2011 Rev. 0
1
Publication Order Number:
2N3019/D


  ON Semiconductor Electronic Components Datasheet  

2N3019 Datasheet

Low Power Transistor

No Preview Available !

2N3019
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc) (Note 1)
(IC = 10 mAdc, VCE = 10 Vdc) (Note 1)
(IC = 150 mAdc, VCE = 10 Vdc) (Note 1)
(IC = 500 mAdc, VCE = 10 Vdc) (Note 1)
(IC = 1.0 Adc, VCE = 10 Vdc) (Note 1)
Collector Emitter Saturation Voltage (Note 1)
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
Base Emitter Saturation Voltage (Note 1)
(IC = 150 mAdc, IB = 15 mAdc)
SMALLSIGNAL CHARACTERISTICS
Output Capacitance (VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz)
SmallSignal Current Gain
(IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz)
1. Pulse Test: See section 4 of MILSTD750.
Symbol
hFE
VCE(sat)
VBE(sat)
Cobo
|hfe|
Min Max
50 300
90
100 300
50 300
15
0.2
0.5
1.1
12
5.0 20
Unit
Vdc
Vdc
pF
http://onsemi.com
2


Part Number 2N3019
Description Low Power Transistor
Maker ON Semiconductor
Total Page 3 Pages
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