2N3055 Datasheet | onsemi

Features - DC Current Gain - h FE = 20 - 70 @ IC = 4 Adc - Collector- Emitter Saturation Voltage - VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc - Excellent Safe Operating Area - Pb- Free Packages are Available- MAXIMUM RATINGS Rating Symbol Value Unit Collector- Emitter Voltage Collector- Emitter Voltage Collector- Base Voltage Emitter- Base Voltage Collector Current - Continuous Base Current Total Power Dissipation @ TC = 25C Derate Above 25C VCEO VCER VCB VEB IC IB PD 60 70 100 7 15 7 115 0.657 Vdc Vdc Vdc Vdc Adc Adc W W/C Operating and Storage Junction Temperature Range TJ, Tstg - 65 to +200 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. PD, POWER DISSIPATION (WATTS) 160 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 200 TC, CASE TEMPERATURE (C) Figure 1. Power Derating - For additional information on our Pb- Free strategy and soldering details, please download the onsemi Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DATA SHEET .onsemi. 15 AMPERE POWER TRANSISTORS PLEMENTARY SILICON 60 VOLTS, 115 WATTS TO- 204AA (TO- 3) CASE 1- 07 STYLE 1 MARKING DIAGRAM xxxx55G AYYWW MEX xxxx55 G A YY WW MEX = Device Code xxxx = 2N30 or MJ20 = Pb- Free Package = Location Code = Year = Work Week = Country of Orgin ORDERING INFORMATION Device 2N3055 2N3055G MJ2955 Package TO- 204AA TO- 204AA (Pb- Free) TO-...