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  ON Semiconductor Electronic Components Datasheet  

2N3700 Datasheet

Low Power Transistor

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2N3019, 2N3019S, 2N3700
Low Power Transistors
NPN Silicon
Features
MILPRF19500/391 Qualified
Available as JAN, JANTX, and JANTXV
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Value
Collector Emitter Voltage
VCEO
80
Collector Base Voltage
VCBO
140
Emitter Base Voltage
VEBO
7.0
Collector Current Continuous
IC 1.0
Total Device Dissipation @ TA = 25°C
2N3019, 2N3019S
2N3700
PT
800
500
Unit
Vdc
Vdc
Vdc
Adc
mW
Total Device Dissipation @ TC = 25°C
2N3019, 2N3019S
2N3700
PT
W
5.0
1.0
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to
+200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol Max
Unit
Thermal Resistance, Junction to Ambient
2N3019, 2N3019S
2N3700
RqJA
°C/W
195
325
Thermal Resistance, Junction to Case
2N3019, 2N3019S
2N3700
RqJC
°C/W
30
150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
TO5
CASE 205AA
STYLE 1
2N3019
TO39
CASE 205AB
STYLE 1
2N3019S
TO18
CASE 206AA
STYLE 1
2N3700
ORDERING INFORMATION
Device
Package
Shipping
JAN2N3019
JANTX2N3019
TO5
Bulk
JANTXV2N3019
JAN2N3019S
JANTX2N3019S
TO39
Bulk
JANTXV2N3019S
JAN2N3700
JANTX2N3700
TO18
Bulk
JANTXV2N3700
© Semiconductor Components Industries, LLC, 2012
August, 2012 Rev. 2
1
Publication Order Number:
2N3019/D


  ON Semiconductor Electronic Components Datasheet  

2N3700 Datasheet

Low Power Transistor

No Preview Available !

2N3019, 2N3019S, 2N3700
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage
(IC = 30 mAdc)
EmitterBase Cutoff Current
(VEB = 5.0 Vdc)
(VEB = 7.0 Vdc)
CollectorEmitter Cutoff Current
(VCE = 90 Vdc)
CollectorBase Cutoff Current
(VCB = 140 Vdc)
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 150 mAdc, VCE = 10 Vdc)
(IC = 500 mAdc, VCE = 10 Vdc)
(IC = 1.0 Adc, VCE = 10 Vdc)
Collector Emitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
Base Emitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
SMALLSIGNAL CHARACTERISTICS
Magnitude of SmallSignal Current Gain
(IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz)
SmallSignal Current Gain
(IC = 1.0 mAdc, VCE = 5 Vdc, f = 1 kHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, 100 kHz f 1.0 MHz)
Noise Figure
(VCE = 10 Vdc, IC = 100 mAdc, Rg = 1 kW, PBW = 200 Hz)
CollectorBase Time Constant
(VCB = 10 Vdc, IC = 10 mAdc, f = 79.8 MHz)
SWITCHING CHARACTERISTICS
Pulse Response
(Reference Figure in MILPRF19500/391)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
Symbol
Min Max
Unit
V(BR)CEO
IEBO
ICEO
ICBO
80
Vdc
10 nAdc
10 mAdc
10 nAdc
10 mAdc
hFE
VCE(sat)
VBE(sat)
50 300
90
100 300
50 300
15
0.2
0.5
1.1
Vdc
Vdc
|hfe|
hfe
Cobo
Cibo
NF
r’b,CC
5.0 20
80 400
12
60
4.0
400
pF
pF
dB
ps
ton + toff
ns
30
http://onsemi.com
2


Part Number 2N3700
Description Low Power Transistor
Maker ON Semiconductor
PDF Download

2N3700 Datasheet PDF






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