Download 2SC5658RM3T5G Datasheet PDF
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2SC5658RM3T5G Key Features

  • Reduces Board Space
  • High hFE, 210 -460 (typical)
  • Low VCE(sat), < 0.5 V
  • ESD Performance: Human Body Model; u 2000 V
  • Available in 8 mm, 7-inch/3000 Unit Tape and Reel
  • NSV Prefix for Automotive and Other

2SC5658RM3T5G Description

NPN Silicon General Purpose Amplifier Transistor 2SC5658M3T5G, 2SC5658RM3T5G This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-723 package which is designed for low power surface mount applications, where board space is at a premium.