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Ordering number : EN8283A
2SK3746
N-Channel Power MOSFET
1500V, 2A, 13Ω, TO-3P-3L
http://onsemi.com
Features
• Low ON-resistance, low input capacitance, ultrahigh-speed switching • High reliability (Adoption of HVP process) • Avalanche resistance guarantee
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
VDSS VGSS ID IDP
Allowable Power Dissipation
PD
Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2
*1 VDD=50V, L=20mH, IAV=2A (Fig.1) *2 L≤20mH, single pulse
Tch Tstg EAS IAV
Conditions
PW≤10μs, duty cycle≤1% Tc=25°C
Ratings 1500 ±20 2 4 2.