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2SK3747 - N-Channel Power MOSFET

Features

  • Low ON-resistance, low input capacitance, ultrahigh-speed switching.
  • High reliability (Adoption of HVP process).
  • Attachment workability is good by Mica-less package.
  • Avalanche resistance guarantee Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Ava.

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Datasheet Details

Part number 2SK3747
Manufacturer onsemi
File Size 184.76 KB
Description N-Channel Power MOSFET
Datasheet download datasheet 2SK3747 Datasheet

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Full PDF Text Transcription

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Ordering number : EN7767B 2SK3747 N-Channel Power MOSFET 1500V, 2A, 13Ω, TO-3PF-3L http://onsemi.com Features • Low ON-resistance, low input capacitance, ultrahigh-speed switching • High reliability (Adoption of HVP process) • Attachment workability is good by Mica-less package • Avalanche resistance guarantee Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 Avalanche Current *2 EAS IAV Note :*1 VDD=50V, L=20mH, IAV=2A (Fig.1) *2 L≤20mH, single pulse Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings 1500 ±35 2 4 3.
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