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  ON Semiconductor Electronic Components Datasheet  

BC337 Datasheet

Amplifier Transistors

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BC337, BC337-25,
BC337-40
Amplifier Transistors
NPN Silicon
Features
These are PbFree Devices
MAXIMUM RATINGS
Rating
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Symbol
VCEO
VCBO
VEBO
IC
PD
Value
45
50
5.0
800
625
5.0
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5 W
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoAmbient RqJA
200 °C/W
Thermal Resistance, JunctiontoCase
RqJC
83.3 °C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
http://onsemi.com
COLLECTOR
1
2
BASE
3
EMITTER
TO92
CASE 29
STYLE 17
123
STRAIGHT LEAD
BULK PACK
12 3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
BC33
7xx
AYWW G
G
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
November, 2013 Rev. 8
1
BC337xx = Device Code
(Refer to page 4)
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Publication Order Number:
BC337/D


  ON Semiconductor Electronic Components Datasheet  

BC337 Datasheet

Amplifier Transistors

No Preview Available !

BC337, BC33725, BC33740
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage
(IC = 10 mA, IB = 0)
Collector Emitter Breakdown Voltage
(IC = 100 mA, IE = 0)
Emitter Base Breakdown Voltage
(IE = 10 mA, IC = 0)
Collector Cutoff Current
(VCB = 30 V, IE = 0)
Collector Cutoff Current
(VCE = 45 V, VBE = 0)
Emitter Cutoff Current
(VEB = 4.0 V, IC = 0)
ON CHARACTERISTICS
V(BR)CEO
45
Vdc
V(BR)CES
50
Vdc
V(BR)EBO
5.0
Vdc
ICBO − − 100 nAdc
ICES − − 100 nAdc
IEBO − − 100 nAdc
DC Current Gain
(IC = 100 mA, VCE = 1.0 V)
(IC = 300 mA, VCE = 1.0 V)
BC337
BC33725
BC33740
hFE
100 630
160 400
250 630
60
BaseEmitter On Voltage
(IC = 300 mA, VCE = 1.0 V)
Collector Emitter Saturation Voltage
(IC = 500 mA, IB = 50 mA)
SMALLSIGNAL CHARACTERISTICS
VBE(on)
VCE(sat)
1.2 Vdc
0.7 Vdc
Output Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz)
Cob 15 pF
Current Gain Bandwidth Product
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
fT 210 MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1.0
0.7 D = 0.5
0.5
0.3 0.2
0.2 0.1
0.1 0.05
0.07 0.02
0.05
0.03 0.01
0.02
SINGLE PULSE
SINGLE PULSE
0.01
0.001 0.002
0.005 0.01 0.02
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.05 0.1 0.2
0.5 1.0 2.0
t, TIME (SECONDS)
Figure 1. Thermal Response
qJC(t) = (t) qJC
qJC = 100°C/W MAX
qJA(t) = r(t) qJA
qJA = 375°C/W MAX
D CURVES APPLY FOR
POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) qJC(t)
5.0 10 20
50
100
http://onsemi.com
2


Part Number BC337
Description Amplifier Transistors
Maker ON Semiconductor
Total Page 5 Pages
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