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  ON Semiconductor Electronic Components Datasheet  

BC640-16 Datasheet

High Current Transistors

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BC636, BC636-16, BC638,
BC640, BC640-16
High Current Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
BC636
BC638
BC640
Collector-Base Voltage
BC636
BC638
BC640
Emitter-Base Voltage
Collector Current — Continuous
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Total Device Dissipation
@ TA = 25°C
Derate above 25°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction to Ambient
Thermal Resistance,
Junction to Case
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
Symbol
RθJA
RθJC
Value
–45
–60
–80
–45
–60
–80
–5.0
–0.5
Unit
Vdc
Vdc
Vdc
Adc
625 mW
5.0 mW/°C
1.5
12
–55 to
+150
Watts
mW/°C
°C
Max Unit
200 °C/W
83.3 °C/W
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COLLECTOR
2
3
BASE
1
EMITTER
1
23
CASE 29
TO–92
STYLE 14
ORDERING INFORMATION
Device
Package
Shipping
BC636
TO–92
5000 Units/Box
BC636ZL1
TO–92 2000/Ammo Pack
BC636–16ZL1
TO–92 2000/Ammo Pack
BC638
TO–92
5000 Units/Box
BC638ZL1
TO–92 2000/Ammo Pack
BC640
TO–92
5000 Units/Box
BC640ZL1
TO–92 2000/Ammo Pack
BC640–16
TO–92
5000 Units/Box
© Semiconductor Components Industries, LLC, 2001
June, 2000 – Rev. 1
1
Publication Order Number:
BC636/D


  ON Semiconductor Electronic Components Datasheet  

BC640-16 Datasheet

High Current Transistors

No Preview Available !

BC636, BC636–16, BC638, BC640, BC640–16
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –10 mAdc, IB = 0)
BC636
BC638
BC640
V(BR)CEO
Collector–Base Breakdown Voltage
(IC = –100 µAdc, IE = 0)
BC636
BC638
BC640
V(BR)CBO
Emitter–Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = –30 Vdc, IE = 0)
(VCB = –30 Vdc, IE = 0, TA = 125°C)
ON CHARACTERISTICS (1)
ICBO
DC Current Gain
(IC = –5.0 mAdc, VCE = –2.0 Vdc)
(IC = –150 mAdc, VCE = –2.0 Vdc)
(IC = –500 mA, VCE = –2.0 V)
BC636
BC636–16
BC638
BC640
BC640–16
hFE
Collector–Emitter Saturation Voltage
(IC = –500 mAdc, IB = –50 mAdc)
VCE(sat)
Base–Emitter On Voltage
(IC = –500 mAdc, VCE = –2.0 Vdc)
VBE(on)
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = –50 mAdc, VCE = –2.0 Vdc, f = 100 MHz)
fT
Output Capacitance
(VCB = –10 Vdc, IE = 0, f = 1.0 MHz)
Cob
Input Capacitance
(VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz)
Cib
1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
Min
–45
–60
–80
–45
–60
–80
–5.0
25
40
100
40
40
100
25
Typ
–0.25
–0.5
150
9.0
110
Max
–100
–10
250
250
160
160
250
–0.5
–1.0
Unit
Vdc
Vdc
Vdc
nAdc
µAdc
Vdc
Vdc
MHz
pF
pF
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2


Part Number BC640-16
Description High Current Transistors
Maker ON Semiconductor
Total Page 4 Pages
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