BUV21G Features
* High DC Current Gain: hFE min = 20 at IC = 12 A
* Low VCE(sat), VCE(sat) max = 0.6 V at IC = 8 A
* Very Fast Switching Times: TF max = 0.4 ms at IC = 25 A
* These are Pb
* Free Devices
* MAXIMUM RATINGS Rating Symbol Value Collector
* Emitter Vol
Datasheet Details
BUV21G, BUV21
108.83 KB
Npn silicon power transistor.
This datasheet PDF includes multiple part numbers: BUV21G, BUV21.
Please refer to the document for exact specifications by model.
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BUV21G Distributor
