FCH130N60 Datasheet - ON Semiconductor

N-Channel MOSFET

FCH130N60 Features

* 650 V @ TJ = 150°C

* Typ. RDS(on) = 112 mW

* Ultra Low Gate Charge (Typ. Qg = 54 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 240 pF)

* 100% Avalanche Tested

* This Device is Pb

* Free and is RoHS Compliant Applications

* T

FCH130N60 General Description

SUPERFET® II MOSFET is ON Semiconductor’s brand *new high voltage super *junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on *resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss.

FCH130N60 Datasheet (361.14 KB)