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FDC655BN - Single N-Channel MOSFET

General Description

This N Channel Logic Level MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on

state resistance and yet maintain superior switching performance.

Key Features

  • Max RDS(ON) = 25 mW @ VGS = 10 V, ID = 6.3 A.
  • Max RDS(ON) = 33 mW @ VGS = 4.5 V, ID = 5.5 A.
  • Fast Switching.
  • Low Gate Charge.
  • High Performance Trench Technology for Extremely Low RDS(ON).
  • This Device is Pb.
  • Free, Halide Free and is RoHS Compliant MOSFET.

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Datasheet Details

Part number FDC655BN
Manufacturer onsemi
File Size 364.29 KB
Description Single N-Channel MOSFET
Datasheet download datasheet FDC655BN Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – Single, N-Channel, Logic Level, POWERTRENCH) 30 V, 6.3 A, 25 mW FDC655BN General Description This N−Channel Logic Level MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in−line power loss and fast switching are required. Features • Max RDS(ON) = 25 mW @ VGS = 10 V, ID = 6.3 A • Max RDS(ON) = 33 mW @ VGS = 4.5 V, ID = 5.